Paragraf Unwraps Graphene-Based FET Made at New Graphene Foundry
Paragraf has launched the PMF2000 GFET, a graphene-based transistor designed for scalable molecular sensing applications. This device is produced at the company's new graphene foundry in Huntingdon, England, which is claimed to be the world's first. The PMF2000 aims to provide higher consistency and repeatability in production while allowing for customization in sensing applications across various industries.
- ▪The PMF2000 GFET is designed for molecular sensing applications in healthcare, agritech, chemical analysis, and industrial research.
- ▪Paragraf's manufacturing process reduces contamination and improves repeatability by growing graphene directly on the substrate.
- ▪The device features three independent graphene sensing channels and is compatible with standard data acquisition systems.
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| Original publisher | Allaboutcircuits |
| Canonical URL | https://www.allaboutcircuits.com/news/paragraf-unwraps-graphene-based-fet-made-at-new-graphene-foundry/ |
| Publication time | Fri, 29 May 2026 22:58:02 +0000 |
| Retrieval time | 2026-05-29T23:20:36.568Z |
| Last seen | 2026-05-29T23:20:36.568Z |
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Paragraf Unwraps Graphene-Based FET Made at New Graphene Foundry Paragraf recently introduced a new GFET, a next-generation graphene transistor platform designed for scalable molecular sensing and research applications. News 6 hours ago by Joshua Tidwell Paragraf has introduced the PMF2000 GFET, a new graphene field-effect transistor platform designed for sensing and research applications that require greater consistency, repeatability, and scalable production. The device is the first product released from the company’s new large-wafer graphene foundry in Huntingdon, England, which Paragraf describes as the world’s first graphene foundry. Paragraf's PMF2000 GFET.
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Excerpt limited to ~120 words for fair-use compliance. The full article is at Allaboutcircuits.