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Paragraf Unwraps Graphene-Based FET Made at New Graphene Foundry

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Paragraf Unwraps Graphene-Based FET Made at New Graphene Foundry
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Paragraf has launched the PMF2000 GFET, a graphene-based transistor designed for scalable molecular sensing applications. This device is produced at the company's new graphene foundry in Huntingdon, England, which is claimed to be the world's first. The PMF2000 aims to provide higher consistency and repeatability in production while allowing for customization in sensing applications across various industries.

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Original publisherAllaboutcircuits
Canonical URLhttps://www.allaboutcircuits.com/news/paragraf-unwraps-graphene-based-fet-made-at-new-graphene-foundry/
Publication timeFri, 29 May 2026 22:58:02 +0000
Retrieval time2026-05-29T23:20:36.568Z
Last seen2026-05-29T23:20:36.568Z
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Opening excerpt (first ~120 words) tap to expand

Paragraf Unwraps Graphene-Based FET Made at New Graphene Foundry Paragraf recently introduced a new GFET, a next-generation graphene transistor platform designed for scalable molecular sensing and research applications. News 6 hours ago by Joshua Tidwell Paragraf has introduced the PMF2000 GFET, a new graphene field-effect transistor platform designed for sensing and research applications that require greater consistency, repeatability, and scalable production. The device is the first product released from the company’s new large-wafer graphene foundry in Huntingdon, England, which Paragraf describes as the world’s first graphene foundry. Paragraf's PMF2000 GFET.

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